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Sorption of 4He, H2, Ne, N2, CH4 and Kr impurities in graphene oxide at low temperatures. Quantum effects

机译:低温下在氧化石墨烯中吸附4He,H2,Ne,N2,CH4和Kr杂质量子效应

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摘要

Sorption and the subsequent desorption of 4He, H2, Ne, N2, CH4, and Kr gas impurities by graphene oxide(GO), glucose-reduced GO (RGO-Gl) and hydrazine-reduced GO (RGO-Hz) powders have been investigated in the temperature interval 2¿290 K. It has been found that the sorptive capacity of the reduced sample RGO-Hz is three to six times higher than that of GO. The reduction of GO with glucose has only a slight effect on its sorptive properties. The temperature dependences of the diffusion coefficients of the GO, RGO-Gl and RGO-Hz samples have been obtained using the measured characteristic times of sorption. It is assumed that the tempera-ture dependences of the diffusion coefficients are determined by the competition of the thermally activated and tunneling mechanisms, the tunneling contribution being dominant at low temperatures.c2013 AIP Publishing LLC
机译:研究了氧化石墨烯(GO),葡萄糖还原GO(RGO-Gl)和肼还原GO(RGO-Hz)粉末对4He,H2,Ne,N2,CH4和Kr气体杂质的吸附和随后的解吸在2到290 K的温度区间内。已经发现,降低的样本RGO-Hz的吸附能力是GO的三到六倍。葡萄糖对GO的还原对其吸附性能的影响很小。 GO,RGO-G1和RGO-Hz样品的扩散系数的温度依赖性已经使用所测量的吸附特征时间获得。假设扩散系数的温度依赖性是由热激活和隧穿机制的竞争决定的,在低温下隧穿的贡献占主导地位。c2013AIP Publishing LLC

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